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See Technical Specifications

SSM6K818R +BOM

Trans MOSFET N-CH Si 30V 15A T/R

Manufacturer:

Toshiba Semiconductor
Mfr.Part #:

SSM6K818R
Datasheet:

SSM6K818R Datasheet (PDF)
Series:

Automotive, AEC-Q101
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

30 V
EDA/CAD Models:

Request Free CAD Models for SSM6K818R

Avaq Semiconductor offers the highly versatile and reliable SSM6K818R driver, produced by Toshiba Semiconductor. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the SSM6K818R.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	Automotive, AEC-Q101
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	Current - Continuous Drain (Id) @ 25°C	15A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	12mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	2.1V @ 100µA	Gate Charge (Qg) (Max) @ Vgs	7.5 nC @ 4.5 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	1130 pF @ 15 V
FET Feature	-	Power Dissipation (Max)	1.5W (Ta)
Operating Temperature	150°C	Mounting Type	Surface Mount
Base Product Number	SSM6K818	Product Category:	MOSFET
Technology:	Si	Tradename:	U-MOSIX-H
Product Type:	MOSFET	Subcategory:	MOSFETs