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See Technical Specifications

SSM6J808R +BOM

MOSFETs Silicon P-Channel MOS (U-MOSvi)

Manufacturer:

Toshiba Semiconductor
Mfr.Part #:

SSM6J808R
Datasheet:

SSM6J808R Datasheet (PDF)
Pin Count:

6
Released Date:

Oct 18, 2020
Last Modified Date:

Mar 7, 2023 4:10 PM UTC
EDA/CAD Models:

Request Free CAD Models for SSM6J808R

Key Features

Characteristics
Symbol
Condition
Value
Unit
Gate threshold voltage (Max)
V
th
V
Drain-Source on-resistance (Max)
R
DS(ON)
GS
35
mΩ
Drain-Source on-resistance (Max)
R
DS(ON)
GS
48
mΩ
Drain-Source on-resistance (Max)
R
DS(ON)
GS
52
mΩ
Input capacitance (Typ.)
C
iss
1020
pF
Total gate charge (Typ.)
Q
g
V
GS
24.2
nC

Specifications

Pin Count	6	Released Date	Oct 18, 2020
Last Modified Date	Mar 7, 2023 4:10 PM UTC

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Ratings and Reviews

D**n 11/19/2022

The order is received, the description corresponds, the delivery is long. I have not yet checked-once, in the case of marriage i will add a tip. Seller recommend!

M**n 06/09/2021

not the candle, but flashes

Z**r 03/26/2021

According to the labelThe item is recognized by the tester as a bipolar transistor

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SSM6J808R Datasheet PDF

Preliminary Specification SSM6J808R PDF Download

SSM6J808R PDF Preview

In Stock: 6,161

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