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Bipolar (BJT) Transistor Array 2 NPN (Dual) 400V 4A 3W Through Hole 8-DIP
DIP-8Manufacturer:
STMicroelectronics
Mfr.Part #:
STD840DN40
Datasheet:
Mounting Style:
Through Hole
Transistor Polarity:
NPN
Configuration:
Dual
Collector- Emitter Voltage VCEO Max:
400 V
EDA/CAD Models:
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Bipolar (BJT) Transistor Array 2 NPN (Dual) 400V 4A 3W Through Hole 8-DIP
Product Category | Bipolar Transistors - BJT | Mounting Style | Through Hole |
Transistor Polarity | NPN | Configuration | Dual |
Collector- Emitter Voltage VCEO Max | 400 V | Collector- Base Voltage VCBO | 700 V |
Emitter- Base Voltage VEBO | 18 V | Collector-Emitter Saturation Voltage | 1 V |
Maximum DC Collector Current | 8 A | Pd - Power Dissipation | 3 W |
Maximum Operating Temperature | + 150 C | Series | STD840DN40 |
Continuous Collector Current | 4 A | DC Collector/Base Gain hfe Min | 8 |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 50 |
Subcategory | Transistors | Technology | Si |
Unit Weight | 0.080001 oz |
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