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See Technical Specifications

STGWA60H65DFB +BOM

IGBT Trench Field Stop 650 V 80 A 375 W Through Hole TO-247-3

Manufacturer:

STMicroelectronics
Mfr.Part #:

STGWA60H65DFB
Datasheet:

STGWA60H65DFB Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

650 V
EDA/CAD Models:

Request Free CAD Models for STGWA60H65DFB

STGWA60H65DFB General Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Key Features

Safe and reliable operation
High efficiency and low power consumption
Advanced temperature monitoring system

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	650 V	Collector-Emitter Saturation Voltage	2 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	80 A
Pd - Power Dissipation	375 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Series	STGWA60H65DFB
Continuous Collector Current	80 A	Continuous Collector Current Ic Max	80 A
Gate-Emitter Leakage Current	250 nA	Height	5.15 mm
Length	20.15 mm	Operating Temperature Range	- 55 C to + 175 C
Product Type	IGBT Transistors	Factory Pack Quantity	600
Subcategory	IGBTs	Width	15.75 mm
Unit Weight	1.340411 oz