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STGW80H65DFB-4 +BOM

Trench gate field-stop 650 V, 80 A high speed HB series IGBT

Manufacturer:

STMicroelectronics
Mfr.Part #:

STGW80H65DFB-4
Datasheet:

STGW80H65DFB-4 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

650 V
EDA/CAD Models:

Request Free CAD Models for STGW80H65DFB-4

STGW80H65DFB-4 General Description

The STGW80H65DFB-4 is an IGBT device that utilizes a cutting-edge trench gate field-stop structure to enhance performance. A part of the HB series, this IGBT strikes a balance between conduction and switching loss, making it ideal for maximizing the efficiency of frequency converters. The inclusion of a Kelvin pin enables faster switching, separating the power path from the driving signal. Additionally, the device boasts a slightly positive VCE(sat) temperature coefficient and a tightly controlled parameter distribution, ensuring safer parallel operation

Key Features

V_CE(sat) = 1.6 V (typ.) @ I_C = 80 A
Maximum junction temperature: T_J = 175 °C
High speed switching series
Minimized tail current
Tight parameter distribution
Safe paralleling
Low thermal resistance
Very fast soft recovery antiparallel diode
Excellent switching performance thanks to the extra driving kelvin pin

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	650 V	Collector-Emitter Saturation Voltage	1.6 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	120 A
Pd - Power Dissipation	470 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Series	STGW80H65DFB-4
Product Type	IGBT Transistors	Factory Pack Quantity	600
Subcategory	IGBTs	Unit Weight	0.156264 oz