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THGBMDG5D1LBAIT +BOM

Ultra-low power, high-capacity storage module for mobile and automotive use case

THGBMDG5D1LBAIT General Description

The THGBMDG5D1LBAIT is a cutting-edge 128GB NAND flash memory chip developed by Toshiba, showcasing the latest BiCS4 3D flash memory technology with a remarkable 96 layers of 3D NAND architecture. This innovative chip is engineered to meet the demands of various devices, including smartphones, tablets, SSDs, and other portable gadgets requiring rapid and efficient data storage capabilities. With its impressive data transfer speed, this chip ensures swift access to stored information, significantly enhancing overall performance. Not only does it deliver superior speed, but it also offers exceptional reliability and endurance, making it an ideal choice for continuous and prolonged usage in a wide range of applications. In addition, the THGBMDG5D1LBAIT boasts a compact form factor and low power consumption, making it a perfect fit for small and energy-efficient devices where space and battery life are critical factors. Furthermore, advanced error correction and wear-leveling technologies are integrated into the chip to guarantee data integrity and longevity, emphasizing its commitment to providing a reliable and sustainable storage solution

Specifications

Source Content uid THGBMDG5D1LBAIT Pbfree Code Yes
Part Life Cycle Code Obsolete Reach Compliance Code
Date Of Intro 2017-01-11 JESD-30 Code R-PBGA-B153
Memory Density 34359738368 bit Memory IC Type MEMORY CIRCUIT
Memory Width 8 Number of Functions 1
Number of Terminals 153 Number of Words 4294967296 words
Number of Words Code 4000000000 Operating Temperature-Max 85 °C
Operating Temperature-Min -25 °C Organization 4GX8
Surface Mount YES Technology CMOS
Temperature Grade OTHER Terminal Form BALL
Terminal Position BOTTOM

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