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See Technical Specifications

UF3C065040B3 +BOM

A 650-volt silicon carbide FET featuring a low resistance of 42 milliohms

Manufacturer:

Qorvo
Mfr.Part #:

UF3C065040B3
Datasheet:

UF3C065040B3 Datasheet (PDF)
Technology:

SiC
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for UF3C065040B3

UF3C065040B3 General Description

In a world where efficiency and reliability are of utmost importance, the UF3C065040B3 power MOSFET stands out as a true innovation. Its state-of-the-art design, utilizing UnitedSiC's Gen 3 SiC technology, ensures optimal performance in demanding environments. With a focus on reducing conduction losses and improving thermal performance, this MOSFET is poised to revolutionize high-power applications across industries. The UF3C065040B3 is a testament to UnitedSiC's dedication to pushing the boundaries of what is possible in power electronics

Application

SWITCHING

Specifications

Product Category	MOSFET	Technology	SiC
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	650 V
Id - Continuous Drain Current	41 A	Rds On - Drain-Source Resistance	52 mOhms
Vgs - Gate-Source Voltage	- 25 V, + 25 V	Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	51 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	176 W
Channel Mode	Enhancement	Qualification	AEC-Q101
Tradename	SiC FET	Series	UF3C
Configuration	Single	Product Type	MOSFET
Factory Pack Quantity	800	Subcategory	MOSFETs
Unit Weight	0.085158 oz