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See Technical Specifications

UF3C120040K4S +BOM

Fast SiC FETs for switching applications

Manufacturer:

Qorvo
Mfr.Part #:

UF3C120040K4S
Datasheet:

UF3C120040K4S Datasheet (PDF)
Technology:

SiC
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for UF3C120040K4S

UF3C120040K4S General Description

Whether it's power supplies, motor drives, renewable energy systems, or industrial inverters, the UF3C120040K4S module proves to be a versatile and reliable asset. Its advanced features and capabilities make it a standout performer in the realm of high-power electronics, promising unmatched performance and longevity for critical applications. Embrace the UF3C120040K4S module for your power needs, and experience the pinnacle of power efficiency and stability

Specifications

Product Category	MOSFET	Technology	SiC
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	1.2 kV
Id - Continuous Drain Current	65 A	Rds On - Drain-Source Resistance	45 mOhms
Vgs - Gate-Source Voltage	- 25 V, + 25 V	Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	51 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	429 W
Channel Mode	Enhancement	Qualification	AEC-Q101
Tradename	SiC FET	Series	UF3C
Configuration	Single	Fall Time	10 ns
Product Type	MOSFET	Rise Time	27 ns
Factory Pack Quantity	30	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	50 ns
Typical Turn-On Delay Time	24 ns	Unit Weight	0.211644 oz