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See Technical Specifications

US5U1TR +BOM

This product is a Transistor MOSFET in N-channel configuration, designed for operation at 30V and 1

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

US5U1TR
Datasheet:

US5U1TR Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

30 V
Current - Continuous Drain (Id) @ 25°C:

1.5A (Ta)
EDA/CAD Models:

Request Free CAD Models for US5U1TR

US5U1TR General Description

The US5U1TR ROHM MOSFETs are engineered to have low RDS(on) resistance, achieved through the incorporation of cutting-edge micro-processing technologies. This means that these devices offer efficient and reliable performance, enabling them to meet the demands of diverse applications in the market. With a wide lineup available, including hybrid types that combine MOSFETs with Schottky Barrier Diodes, users have the flexibility to choose the right component for their specific requirements. Whether it's for power management, motor control, or any other electronics application, these MOSFETs deliver superior functionality and versatility

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	Current - Continuous Drain (Id) @ 25°C	1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V	Rds On (Max) @ Id, Vgs	240mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs	2.2 nC @ 4.5 V
Vgs (Max)	±12V	Input Capacitance (Ciss) (Max) @ Vds	80 pF @ 10 V
FET Feature	Schottky Diode (Isolated)	Power Dissipation (Max)	1W (Ta)
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	US5U1