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US6K1TR +BOM

Dual N-Channel 30V MOSFET with 340mΩ On-Resistance and 1W Power Rating, Surface Mount Package with 2.5V Drive Capability

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

US6K1TR
Datasheet:

US6K1TR Datasheet (PDF)
Technology:

MOSFET (Metal Oxide)
Configuration:

2 N-Channel (Dual)
FET Feature:

Logic Level Gate
Drain To Source Voltage (Vdss):

30V
EDA/CAD Models:

Request Free CAD Models for US6K1TR

US6K1TR General Description

The MOSFET product US6K1TR is designed using complex type technology to achieve low ON-resistance, making it suitable for a wide range of applications. Utilizing micro-processing technologies, this product is able to meet the needs of the market with a broad lineup that includes compact types, high-power types, and complex types. Whether you require a compact solution for a small-scale application or a high-power solution for more demanding tasks, this product has you covered. Its versatility and performance make it an ideal choice for various applications

Key Features

Rectified forward current : 4A（US4KB80R） , 6A（US6KB80R） , 8A（US8KB80R） , （with heat sink） 10A（US10KB80R） , 15A（US15KB80R） , 30A（US30KB80R）
Large current capacity of 30A with compact package
High IFSM and High Voltage
UL approved Bridge Rectifier Diodes, registered in file number E142422
High-density mounting for improved space efficiency through the use of SIP（Single In-Line Package）

Specifications

Technology	MOSFET (Metal Oxide)	Configuration	2 N-Channel (Dual)
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	1.5A	Rds On (Max) @ Id, Vgs	240mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs	2.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	80pF @ 10V	Power - Max	1W
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	US6K1