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See Technical Specifications

US6M2TR +BOM

MOSFET N+P 20V 1.5A/1A

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

US6M2TR
Datasheet:

US6M2TR Datasheet (PDF)
Technology:

MOSFET (Metal Oxide)
Configuration:

N and P-Channel
Drain To Source Voltage (Vdss):

30V, 20V
Current - Continuous Drain (Id) @ 25°C:

1.5A, 1A
EDA/CAD Models:

Request Free CAD Models for US6M2TR

US6M2TR General Description

Moreover, US6M2TR sets forth standards for packaging, labeling, and documentation processes, all of which are vital in ensuring the proper identification and tracking of transported goods. By providing clear specifications for these key components, the document contributes to the overall efficiency and accountability of military logistics

Application

SWITCHING

Specifications

Technology	MOSFET (Metal Oxide)	Configuration	N and P-Channel
Drain to Source Voltage (Vdss)	30V, 20V	Current - Continuous Drain (Id) @ 25°C	1.5A, 1A
Rds On (Max) @ Id, Vgs	240mOhm @ 1.5A, 4.5V	Vgs(th) (Max) @ Id	1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	2.2nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds	80pF @ 10V
Power - Max	1W	Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	US6M2