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C2M0160120D +BOM

MOSFET transistor designed for high power applications, featuring 1200V specification and 160 milliohm resistance

C2M0160120D General Description

N-Channel 1200 V 19A (Tc) 125W (Tc) Through Hole TO-247-3

Key Features

  • High blocking voltage with low RDS (on)
  • Easy to parallel and simple to drive
  • Resistant to latch-up
  • Halogen-free

Application

  • Power Management
  • Alternative Energy

Specifications

Product Category MOSFET REACH Details
Technology SiC Mounting Style Through Hole
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 1.2 kV Id - Continuous Drain Current 17.7 A
Rds On - Drain-Source Resistance 196 mOhms Vgs - Gate-Source Voltage - 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.5 V Qg - Gate Charge 32.6 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 125 W Channel Mode Enhancement
Configuration Single Fall Time 7 ns
Forward Transconductance - Min 4.1 S Product Type MOSFET
Rise Time 12 ns Factory Pack Quantity 30
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 13 ns Typical Turn-On Delay Time 7 ns
Unit Weight 0.211644 oz

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In Stock: 7,072

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $11.952 $11.95
10+ $11.503 $115.03
30+ $10.726 $321.78
90+ $10.050 $904.50

The prices below are for reference only.

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