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See Technical Specifications

C2M1000170J +BOM

SiC MOSFET designed for high voltage applications, with a low on-resistance of 1 Ohm

Manufacturer:

Wolfspeed
Mfr.Part #:

C2M1000170J
Datasheet:

C2M1000170J Datasheet (PDF)
Technology:

SiC
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for C2M1000170J

C2M1000170J General Description

Cree's C2M1000170J module is designed to meet the needs of industries such as automotive, renewable energy, and industrial power systems. Its third-generation silicon carbide MOSFET technology sets it apart from traditional power devices, offering superior performance and enhanced reliability. With optimized high-speed switching capabilities, this module enhances power density and operational efficiency in a wide range of applications

Key Features

High efficiency and low power loss
Fast switching speed and high reliability
Suitable for high voltage and current applications
RoHS compliant and lead-free soldering friendly
Wide temperature range and high performance
Precise control and stable operation guaranteed

Application

Accurate test readings
Durable industrial machines

Specifications

Product Category	MOSFET	Technology	SiC
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	1.7 kV
Id - Continuous Drain Current	5.3 A	Rds On - Drain-Source Resistance	1 Ohms
Vgs - Gate-Source Voltage	- 10 V, + 25 V	Vgs th - Gate-Source Threshold Voltage	3.1 V
Qg - Gate Charge	13 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	78 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	40.4 ns	Height	4.435 mm
Length	10.18 mm	Moisture Sensitive	Yes
Product Type	MOSFET	Rise Time	4.8 ns
Factory Pack Quantity	50	Subcategory	MOSFETs
Typical Turn-Off Delay Time	10.8 ns	Typical Turn-On Delay Time	4 ns
Width	9.075 mm	Unit Weight	0.056438 oz