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C2M1000170D +BOM

Voltage Rating: 1700V

C2M1000170D General Description

N-Channel 1700 V 4.9A (Tc) 69W (Tc) Through Hole TO-247-3

Key Features

  • High Efficiency Performance
  • Fast Rise Time Capability
  • Low Gate Drive Current
  • Excellent Thermal Stability
  • Improved Reliability Features
  • Precise Delay Timing Control

Application

  • Power up!
  • Control all!
  • Light it up!
  • Battery boost
  • Temp check
  • Sense it all

Specifications

Product Category MOSFET REACH Details
Technology SiC Mounting Style Through Hole
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 1.7 kV Id - Continuous Drain Current 4.9 A
Rds On - Drain-Source Resistance 1.4 Ohms Vgs - Gate-Source Voltage - 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V Qg - Gate Charge 13 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 69 W Channel Mode Enhancement
Configuration Single Fall Time 9 ns
Forward Transconductance - Min 0.82 S Product Type MOSFET
Rise Time 46 ns Factory Pack Quantity 30
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 15 ns Typical Turn-On Delay Time 9 ns
Unit Weight 0.211644 oz

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In Stock: 5,040

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $7.012 $7.01
10+ $6.212 $62.12
30+ $5.724 $171.72
100+ $5.316 $531.60

The prices below are for reference only.

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