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C2M1000170J-TR +BOM

MOSFET featuring 1700V rating and 1 Ohm RDS ON using silicon carbide technology

Manufacturer:

Wolfspeed, Inc.
Mfr.Part #:

C2M1000170J-TR
Datasheet:

C2M1000170J-TR Datasheet (PDF)
Series:

C2M™
FET Type:

N-Channel
Technology:

SiCFET (Silicon Carbide)
Drain To Source Voltage (Vdss):

1700 V
EDA/CAD Models:

Request Free CAD Models for C2M1000170J-TR

C2M1000170J-TR General Description

Meet the C2M1000170J-TR silicon carbide power MOSFET, a cutting-edge creation by Wolfspeed, a Cree Company, designed to revolutionize high-efficiency power conversion applications. Whether it's motor drives, UPS systems, or renewable energy inverters, this MOSFET is the pinnacle of excellence. With a voltage rating of 1700V and a continuous current rating of 100A, it is perfectly poised to meet the demands of high-power applications. Its low on-resistance of 0.070 ohms is a game-changer in minimizing power losses and enhancing the overall system efficiency. Encased in a TO-247-4 package, it delivers exceptional thermal performance and facilitates easy mounting onto a heatsink for efficient heat dissipation. Not to mention, the C2M1000170J-TR showcases a fast switching speed and high avalanche ruggedness, cementing its reputation for unwavering reliability and robustness in various operating conditions

Specifications

Series	C2M™	FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)	Drain to Source Voltage (Vdss)	1700 V
Current - Continuous Drain (Id) @ 25°C	5.3A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	1.4Ohm @ 2A, 20V	Vgs(th) (Max) @ Id	4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 20 V	Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	200 pF @ 1000 V	Power Dissipation (Max)	78W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	C2M1000170