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CGHV35400F +BOM

High-power RF Mosfet for V application

Manufacturer:

WOLFSPEED, INC
Mfr.Part #:

CGHV35400F
Datasheet:

CGHV35400F Datasheet (PDF)
Shipping Restrictions:

This product may require additional documentation to export from the United States.
Transistor Type:

HEMT
Technology:

GaN
Operating Frequency:

2.9 GHz to 3.5 GHz
EDA/CAD Models:

Request Free CAD Models for CGHV35400F

RF Mosfet 45 V 500 mA 2.9GHz ~ 3.5GHz 11dB 455W 440210

High power density: capable of handling up to 400 watts of power with a drain-source voltage of 50 volts.
High frequency operation: can operate at frequencies up to 3.5 GHz.
High efficiency: can achieve over 60% efficiency in some applications.
Low thermal resistance: enables efficient heat dissipation, which is critical for high-power applications.

Product Category:	RF JFET Transistors	Shipping Restrictions:	This product may require additional documentation to export from the United States.
Transistor Type:	HEMT	Technology:	GaN
Operating Frequency:	2.9 GHz to 3.5 GHz	Gain:	11 dB
Transistor Polarity:	N-Channel	Vds - Drain-Source Breakdown Voltage:	150 V
Vgs - Gate-Source Breakdown Voltage:	- 10 V, 2 V	Id - Continuous Drain Current:	24 A
Output Power:	500 W	Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C	Mounting Style:	Screw Mount
Packaging:	Tray	Product Type:	RF JFET Transistors
Series:	CGHV	Factory Pack Quantity:	1
Subcategory:	Transistors	Vgs th - Gate-Source Threshold Voltage:	- 3.8 V