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CGHV38375F +BOM
RF JFET Transistors 400W, GaN HEMT, 50V, 2.75-3.75GHz, IM FET, Flange
SMD-
Manufacturer:
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Mfr.Part #:
CGHV38375F
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Datasheet:
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Continuous Drain Current (ID):
24 A
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Drain To Source Breakdown Voltage:
125 V
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Drain To Source Voltage (Vdss):
150 V
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Gate To Source Voltage (Vgs):
-10 V
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EDA/CAD Models:
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Availability: 5701 PCS
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CGHV38375F General Description
RF Mosfet 50 V 500 mA 2.75GHz ~ 3.75GHz 12.5dB 400W 440226
Specifications
Continuous Drain Current (ID) | 24 A | Drain to Source Breakdown Voltage | 125 V |
Drain to Source Voltage (Vdss) | 150 V | Gate to Source Voltage (Vgs) | -10 V |
Max Junction Temperature (Tj) | 225 °C | Max Operating Temperature | 225 °C |
Number of Channels | 1 |
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In Stock: 5,701
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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