This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

FJB3307DTM +BOM

High Voltage Fast Switching NPN Power Transistor

Manufacturer:

onsemi
Mfr.Part #:

FJB3307DTM
Datasheet:

FJB3307DTM Datasheet (PDF)
Mounting Style:

SMD/SMT
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

400 V
EDA/CAD Models:

Request Free CAD Models for FJB3307DTM

FJB3307DTM General Description

When it comes to high-speed switching applications, the FJB3307D sets the standard for excellence. Its innovative design and robust construction make it a top choice for engineers and designers who need a transistor they can rely on. The industry-standard TO-263 package not only simplifies the integration process but also enhances the overall performance of the transistor, ensuring that it delivers consistent results every time

Key Features

Advanced PCB Design for EMI Reduction
Low Current Noise Generation
High-Reliability Construction
Excellent Surge Immunity
Built-in Thermal Shutdown Protection
Low Power Consumption

Application

A versatile and reliable choice.
Perfect for all your needs.
An essential for any project.

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	SMD/SMT
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	400 V	Collector- Base Voltage VCBO	700 V
Emitter- Base Voltage VEBO	9 V	Collector-Emitter Saturation Voltage	3 V
Maximum DC Collector Current	16 A	Pd - Power Dissipation	1.72 W
Gain Bandwidth Product fT	-	Minimum Operating Temperature	-
Maximum Operating Temperature	+ 150 C	Series	FJB3307D
Continuous Collector Current	8 A	DC Collector/Base Gain hfe Min	5
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	800
Subcategory	Transistors	Technology	Si
Unit Weight	0.046296 oz