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FJP3305 +BOM

Bipolar (BJT) Transistor NPN 400 V 4 A 4MHz 75 W Through Hole TO-220-3

FJP3305 General Description

Bipolar (BJT) Transistor NPN 400 V 4 A 4MHz 75 W Through Hole TO-220-3

Key Features

  • High Voltage Capability
  • High Speed Switching
  • Suitable for Electronic Ballast and Switching Regulator

Application

  • This product is general usage and suitable for many different applications.

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 400 V Collector- Base Voltage VCBO 700 V
Emitter- Base Voltage VEBO 9 V Maximum DC Collector Current 4 A
Pd - Power Dissipation 75 W Gain Bandwidth Product fT 4 MHz
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 19 Height 9.4 mm
Length 10.1 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 1200 Subcategory Transistors
Technology Si Width 4.7 mm
Part # Aliases FJP3305_NL Unit Weight 0.080072 oz

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