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FJPF5027RTU +BOM

Bipolar (BJT) Transistor NPN 800 V 3 A 15MHz 40 W Through Hole TO-220F-3

FJPF5027RTU General Description

Bipolar (BJT) Transistor NPN 800 V 3 A 15MHz 40 W Through Hole TO-220F-3

Key Features

  • High Speed Switching
  • Wide SOA

Application

  • This product is general usage and suitable for many different applications.

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 800 V Collector- Base Voltage VCBO 1.1 kV
Emitter- Base Voltage VEBO 7 V Collector-Emitter Saturation Voltage 2 V
Maximum DC Collector Current 3 A Pd - Power Dissipation 40 W
Gain Bandwidth Product fT 15 MHz Minimum Operating Temperature -
Maximum Operating Temperature + 150 C Series FJPF5027
Continuous Collector Current 5 A DC Collector/Base Gain hfe Min 15
Height 9.19 mm Length 10.16 mm
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 50
Subcategory Transistors Technology Si
Width 4.7 mm Part # Aliases FJPF5027RTU_NL
Unit Weight 0.080072 oz

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