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Bipolar (BJT) Transistor NPN 400 V 1.5 A 4MHz 20 W Through Hole TO-126-3
TO-126-3Manufacturer:
onsemi
Mfr.Part #:
FJE3303H1TU
Datasheet:
REACH:
Details
Mounting Style:
Through Hole
Transistor Polarity:
NPN
Configuration:
Single
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Bipolar (BJT) Transistor NPN 400 V 1.5 A 4MHz 20 W Through Hole TO-126-3
Product Category | Bipolar Transistors - BJT | REACH | Details |
Mounting Style | Through Hole | Transistor Polarity | NPN |
Configuration | Single | Collector- Emitter Voltage VCEO Max | 400 V |
Collector- Base Voltage VCBO | 700 V | Emitter- Base Voltage VEBO | 9 V |
Collector-Emitter Saturation Voltage | 3 V | Maximum DC Collector Current | 1.5 A |
Pd - Power Dissipation | 20 W | Gain Bandwidth Product fT | 4 MHz |
Minimum Operating Temperature | - | Maximum Operating Temperature | + 150 C |
Series | FJE3303 | DC Collector/Base Gain hfe Min | 8 |
Height | 11 mm | Length | 8 mm |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 1920 |
Subcategory | Transistors | Technology | Si |
Width | 3.25 mm | Part # Aliases | FJE3303H1TU_NL |
Unit Weight | 0.026843 oz |
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