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G3R350MT12D +BOM
TO-247-3 package null MOSFET with 1.2kV voltage rating and 15V gate-source voltage
TO-247-3-
Manufacturer:
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Mfr.Part #:
G3R350MT12D
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Datasheet:
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Series:
G3R™
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FET Type:
N-Channel
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Technology:
SiCFET (Silicon Carbide)
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Drain To Source Voltage (Vdss):
1200 V
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EDA/CAD Models:
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Availability: 8622 PCS
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G3R350MT12D General Description
N-Channel 1200 V 11A (Tc) 74W (Tc) Through Hole TO-247-3
Specifications
Series | G3R™ | FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) | Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 15V |
Rds On (Max) @ Id, Vgs | 420mOhm @ 4A, 15V | Vgs(th) (Max) @ Id | 2.69V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 15 V | Vgs (Max) | ±15V |
Input Capacitance (Ciss) (Max) @ Vds | 334 pF @ 800 V | Power Dissipation (Max) | 74W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
Base Product Number | G3R350 |
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In Stock: 8,622
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