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G3R40MT12K +BOM

1200V 40mΩ TO-247-4 G3R™ SiC MOSFET

Manufacturer:

GeneSiC Semiconductor
Mfr.Part #:

G3R40MT12K
Datasheet:

G3R40MT12K Datasheet (PDF)
Series:

G3R™
FET Type:

N-Channel
Technology:

SiCFET (Silicon Carbide)
Drain To Source Voltage (Vdss):

1200 V
EDA/CAD Models:

Request Free CAD Models for G3R40MT12K

G3R40MT12K General Description

Genesic Semiconductor introduces the G3R40MT12K Sic Mosfet, a powerhouse of a component designed for high voltage applications. This N-channel mosfet boasts an impressive 1.2Kv drain source voltage and a continuous drain current of 71A, ensuring robust performance under challenging conditions. With a power dissipation capability of 333W and a low Rds(On) test voltage of 15V, this mosfet module is optimized for efficiency and reliability. The 4-pin configuration allows for easy installation, while its RoHS compliance underscores Genesic Semiconductor's dedication to environmentally-friendly products

Specifications

Series	G3R™	FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)	Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	71A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	48mOhm @ 35A, 15V	Vgs(th) (Max) @ Id	2.69V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	106 nC @ 15 V	Vgs (Max)	±15V
Input Capacitance (Ciss) (Max) @ Vds	2929 pF @ 800 V	Power Dissipation (Max)	333W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	G3R40