This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

G3R40MT12J +BOM

1200V 40mΩ TO-263-7 G3R™ SiC MOSFET

Manufacturer:

GeneSiC Semiconductor
Mfr.Part #:

G3R40MT12J
Datasheet:

G3R40MT12J Datasheet (PDF)
Series:

G3R™
FET Type:

N-Channel
Technology:

SiCFET (Silicon Carbide)
Drain To Source Voltage (Vdss):

1200 V
EDA/CAD Models:

Request Free CAD Models for G3R40MT12J

G3R40MT12J General Description

One of the standout features of the G3R40MT12J is its pressure contact technology, which not only reduces thermal resistance but also enhances the module's power cycling capabilities. The ceramic baseplate further adds to its thermal management capabilities, making it a durable and long-lasting solution for demanding industrial environments. Installation and maintenance are a breeze thanks to the module's screw mounting system, allowing for quick and hassle-free setup

Specifications

Series	G3R™	FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)	Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	48mOhm @ 35A, 15V	Vgs(th) (Max) @ Id	2.7V @ 18mA (Typ)
Gate Charge (Qg) (Max) @ Vgs	106 nC @ 15 V	Vgs (Max)	±15V
Input Capacitance (Ciss) (Max) @ Vds	2929 pF @ 800 V	Power Dissipation (Max)	374W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	G3R40