Payment Method
G3R350MT12J +BOM
G3R SiC MOSFET, 1200V 350m TO-263-7
TO-263-8,D2PAK(7Leads+Tab),TO-263CA-
Manufacturer:
-
Mfr.Part #:
G3R350MT12J
-
Datasheet:
-
Series:
G3R™
-
FET Type:
N-Channel
-
Technology:
SiCFET (Silicon Carbide)
-
Drain To Source Voltage (Vdss):
1200 V
-
EDA/CAD Models:
Send all BOMs to [email protected], or fill out the form below for a quote on G3R350MT12J. Guaranteed response within 12hr.
Availability: 7014 PCS
Please fill in the short form below and we will provide you the quotation immediately.
G3R350MT12J General Description
N-Channel 1200 V 11A (Tc) 75W (Tc) Surface Mount TO-263-7
Specifications
Series | G3R™ | FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) | Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 15V |
Rds On (Max) @ Id, Vgs | 420mOhm @ 4A, 15V | Vgs(th) (Max) @ Id | 2.69V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 15 V | Vgs (Max) | ±15V |
Input Capacitance (Ciss) (Max) @ Vds | 334 pF @ 800 V | Power Dissipation (Max) | 75W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | G3R350 |
Service Policies and Others
After-Sales & Settlement Related
For alternative payment channels, please reach out to us at:
[email protected]Shipping Method
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
365-Day Product
Quality Guarantee
We promise to provide 365 days quality assurance service for all our products.
In Stock: 7,014
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | - | - |
The prices below are for reference only.
Featured Products
Top Sellers
-
G3R12MT12K
GeneSiC Semiconductor
Field-Effect Transistor for Power Applications
-
G3R20MT12K
GENESIC SEMICONDUCTOR
1200V 20mΩ TO-247-4 G3R™ SiC MOSFET
-
G3R20MT17K
GeneSiC Semiconductor
G3R20MT17K High-Power MOSFET
-
G3R20MT12N
GeneSiC Semiconductor
MOSFET, SIC, N-CH, 1.2KV, 105A, 365W;
-
G2R1000MT33J
GeneSiC Semiconductor
This TO-263-7 surface mount component can handle up to 4A of current and dissipate 74W of power