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JAN2N2222AUB +BOM
Microchip JAN2N2222AUBP/TR
3-SMD,Non-Standard-
Manufacturer:
Microchip Technology
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Mfr.Part #:
JAN2N2222AUB
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Datasheet:
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Transistor Type:
NPN
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Current - Collector (Ic) (Max):
800 mA
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Voltage - Collector Emitter Breakdown (Max):
50 V
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Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
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EDA/CAD Models:
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Availability: 8512 PCS
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JAN2N2222AUB General Description
With its high-reliability design and improved performance specifications, the JAN2N2222AUB offers engineers a dependable solution for applications where performance and reliability are critical. Its adherence to the Joint Army-Navy (JAN) specification for military-grade components further underscores its suitability for use in harsh and demanding environments. The transistor's low noise figure and high current gain make it well-equipped for low-level signal amplification tasks, while its maximum collector current, power dissipation, and voltage rating provide flexibility for a range of applications
Specifications
Transistor Type | NPN | Current - Collector (Ic) (Max) | 800 mA |
Voltage - Collector Emitter Breakdown (Max) | 50 V | Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 50nA | DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
Power - Max | 500 mW | Operating Temperature | -65°C ~ 200°C (TJ) |
Grade | Military | Qualification | MIL-PRF-19500/255 |
Mounting Type | Surface Mount | Base Product Number | 2N2222 |
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In Stock: 8,512
Minimum Order: 1
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