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JANSR2N7269 +BOM

N-Channel TO-254AA MOSFET Transistor Description

Manufacturer:

Microsemi Corporation
Mfr.Part #:

JANSR2N7269
Datasheet:

JANSR2N7269 Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

200 V
Current - Continuous Drain (Id) @ 25°C:

26A (Tc)
EDA/CAD Models:

Request Free CAD Models for JANSR2N7269

JANSR2N7269 General Description

Its impressive surge current handling capability, rapid reverse recovery time, and minimal leakage current set the JANSR2N7269 apart from the competition. Furthermore, its resilience to high levels of radiation cements its status as a go-to component for environments prone to radiation exposure. Trust the JANSR2N7269 for unparalleled performance and longevity in the most demanding circumstances

Key Features

Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Light Weight
ESD Rating: Class 3A per MIL-STD-750, Method 1020

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V	Current - Continuous Drain (Id) @ 25°C	26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	12V	Rds On (Max) @ Id, Vgs	110mOhm @ 26A, 12V
Vgs(th) (Max) @ Id	4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs	170 nC @ 12 V
Vgs (Max)	±20V	Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 150°C	Grade	Military
Qualification	MIL-PRF-19500/603	Mounting Type	Through Hole