Payment Method
![hsbc](/img/service-policies-hsbc.png)
![paypal](/img/service-policies-paypal.png)
![wu](/img/service-policies-wu.png)
![mg](/img/service-policies-mg.png)
Radiation resistant TO-39 power MOSFET
TO-205AFMetalCanManufacturer:
Microsemi Corporation
Mfr.Part #:
JANSR2N7389
Datasheet:
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
6.5A (Tc)
Send all BOMs to
[email protected],
or fill out the form below for a quote on JANSR2N7389. Guaranteed response within
12hr.
Please fill in the short form below and we will provide you the quotation immediately.
Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, QPLFeaturesPotential Applications
FET Type | P-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 12V | Rds On (Max) @ Id, Vgs | 350mOhm @ 6.5A, 12V |
Vgs(th) (Max) @ Id | 4V @ 1mA | Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 12 V |
Vgs (Max) | ±20V | Power Dissipation (Max) | 25W (Tc) |
Operating Temperature | -55°C ~ 150°C | Grade | Military |
Qualification | MIL-PRF-19500/630 | Mounting Type | Through Hole |
After-Sales & Settlement Related
Payment Method
For alternative payment channels, please reach out to us at:
[email protected]Shipping Method
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
365-Day Product
Quality Guarantee
We promise to provide 365 days quality assurance service for all our products.
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | - | - |
The prices below are for reference only.
2N2222
Stmicroelectronics
1000+ $0.587
BC547
Onsemi
NPN Epitaxial Silicon Transistor
ULN2003
Onsemi
Versatile device for driving heavy loads and motor
IRF3205
Infineon
TO-220AB Tube Power Transistor with N-Channel Silicon
TAN15
Microchip
The TAN is a robust NPN transistor designed for high-frequency applications, capable of operating at up to V and continuous curren