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JANTXV2N6796 +BOM

25W Power Amplifier

  • Manufacturer:

    Microsemi Corporation

  • Mfr.Part #:

    JANTXV2N6796

  • Datasheet:

    JANTXV2N6796 Datasheet (PDF) pdf-icon

  • Series:

    Military, MIL-PRF-19500/557

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain To Source Voltage (Vdss):

    100 V

JANTXV2N6796 General Description

100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTXV2N6796 with Hermetic PackagingBenefits

Key Features

  • JEDEC registered 2N6796, 2N6798, 2N6800 and 2N6802 number series.
  • JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/557.
  • JANS qualification is available on 2N6798 only.
  • (See part nomenclature for all available options.)
  • RoHS compliant versions available (commercial grade only).

Specifications

Series Military, MIL-PRF-19500/557 FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 195mOhm @ 8A, 10V Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 28.51 nC @ 10 V Vgs (Max) ±20V
Power Dissipation (Max) 800mW (Ta), 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole

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