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JANTXV2N6796U +BOM

N-channel 100-volt MOSFET with 8-ampere rating in an 18-pin LCC package

Manufacturer:

Microsemi Corporation
Mfr.Part #:

JANTXV2N6796U
Datasheet:

JANTXV2N6796U Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
Current - Continuous Drain (Id) @ 25°C:

8A (Tc)
EDA/CAD Models:

Request Free CAD Models for JANTXV2N6796U

JANTXV2N6796U General Description

The JANTXV2N6796U emerges as a high-caliber N-channel MOSFET transistor tailored for the most demanding applications, emphasizing reliability and efficiency above all else. With a robust construction and a stellar array of performance features including high voltage and current capabilities, low on-resistance, fast switching speed, and superior thermal management, this transistor is a dependable asset in critical industries like military, aerospace, and beyond. Its compliance with the stringent MIL-PRF-19500/538 standards further cements its status as a frontrunner in high-reliability applications

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	195mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	28.51 nC @ 10 V
Vgs (Max)	±20V	Power Dissipation (Max)	800mW (Ta), 25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Grade	Military
Qualification	MIL-PRF-19500/557	Mounting Type	Surface Mount