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PBSS5255PAPSX +BOM

55V, 2A PNP/PNP low VCEsat (BISS) double transistor

Manufacturer:

Nexperia
Mfr.Part #:

PBSS5255PAPSX
Datasheet:

PBSS5255PAPSX Datasheet (PDF)
Mounting Style:

SMD/SMT
Transistor Polarity:

PNP
Configuration:

Dual
Collector- Emitter Voltage VCEO Max:

55 V
EDA/CAD Models:

Request Free CAD Models for PBSS5255PAPSX

PBSS5255PAPSX General Description

PNP/PNP low V Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

Key Features

Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
Reduced Printed-Circuit Board (PCB) requirements
Exposed heat sink for excellent thermal and electrical conductivity
High energy efficiency due to less heat generation
Suitable for Automatic Optical Inspection (AOI) of solder joints

Application

Load switch
Battery-driven devices
Power management
Charging circuits
LED lighting
Power switches (e.g. motors, fans)

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	SMD/SMT
Transistor Polarity	PNP	Configuration	Dual
Collector- Emitter Voltage VCEO Max	55 V	Collector- Base Voltage VCBO	55 V
Emitter- Base Voltage VEBO	7 V	Collector-Emitter Saturation Voltage	300 mV
Maximum DC Collector Current	2 A	Pd - Power Dissipation	960 mW
Gain Bandwidth Product fT	100 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	3000	Subcategory	Transistors
Technology	Si	Part # Aliases	934069681115
Unit Weight	0.000257 oz