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See Technical Specifications

PMDT290UNE +BOM

Small Signal Field-Effect Transistor

Manufacturer:

NXP
Mfr.Part #:

PMDT290UNE
Datasheet:

PMDT290UNE Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Date Of Intro:

2017-02-17
EDA/CAD Models:

Request Free CAD Models for PMDT290UNE

PMDT290UNE General Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Key Features

Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV

Application

Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits

Specifications

Source Content uid	PMDT290UNE	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
Date Of Intro	2017-02-17	Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	20 V	Drain Current-Max (ID)	0.8 A
Drain-source On Resistance-Max	0.38 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-F6	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	2
Number of Terminals	6	Operating Mode	ENHANCEMENT MODE
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Reference Standard	AEC-Q101	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	FLAT
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON