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See Technical Specifications

PMPB11EN +BOM

N-type enhancement mode metal-oxide-semiconductor field-effect transistor with a voltage rating of 30V and a current capacity of 9A

Manufacturer:

NXP
Mfr.Part #:

PMPB11EN
Datasheet:

PMPB11EN Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Case Connection:

DRAIN
EDA/CAD Models:

Request Free CAD Models for PMPB11EN

PMPB11EN General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Key Features

Trench MOSFET technology
Very fast switching
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection

Application

Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portables
Hard disk and computing power management

Specifications

Source Content uid	PMPB11EN	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	9 A
Drain-source On Resistance-Max	0.0145 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	S-PDSO-N6	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	6	Operating Mode	ENHANCEMENT MODE
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	34 A	Reference Standard	IEC-60134
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	NO LEAD	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON