This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

QS6M3TR +BOM

0V voltage rating for N-channel transistor

Manufacturer:

ROHM Semiconductor
Mfr.Part #:

QS6M3TR
Datasheet:

QS6M3TR Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel, P-Channel
Number Of Channels:

2 Channel

QS6M3TR General Description

One of the key features of this MOSFET is its low on resistance, which allows for efficient power transfer and minimal heat generation. The threshold voltage of 1.5V ensures reliable switching behavior, while the maximum operating temperature of 150°C provides a wide range of applications. The dual module configuration makes it versatile for both N and P channel operations

Application

SWITCHING

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel, P-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	30 V, 20 V
Id - Continuous Drain Current	1.5 A	Rds On - Drain-Source Resistance	260 mOhms
Vgs - Gate-Source Voltage	- 12 V, + 12 V	Vgs th - Gate-Source Threshold Voltage	1.5 V
Qg - Gate Charge	1.6 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.25 W
Channel Mode	Enhancement	Series	QS6M3
Configuration	Dual	Fall Time	18 ns, 12 ns
Height	0.85 mm	Length	2.9 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Rise Time	18 ns, 12 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel, 1 P-Channel
Type	MOSFET	Typical Turn-Off Delay Time	15 ns, 45 ns
Typical Turn-On Delay Time	7 ns, 10 ns	Width	1.6 mm
Part # Aliases	QS6M3