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See Technical Specifications

QS8K21TR +BOM

N-channel 45V 4A Transistor MOSFET in TSMT package with tape and reel

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

QS8K21TR
Datasheet:

QS8K21TR Datasheet (PDF)
Technology:

MOSFET (Metal Oxide)
Configuration:

2 N-Channel (Dual)
FET Feature:

Logic Level Gate
Drain To Source Voltage (Vdss):

45V
EDA/CAD Models:

Request Free CAD Models for QS8K21TR

QS8K21TR General Description

Featuring a dual MOSFET for motor drive, the QS8K21TR is a newly developed product that offers a high level of performance and reliability. The use of micro-processing technologies ensures that it can deliver low ON-resistance, making it suitable for a wide range of applications. With a broad lineup of compact types, high-power types, and complex types, this product is able to meet the diverse needs of the market. Additionally, the newly developed backside heat dissipation package lineup further enhances its capabilities, making it an ideal choice for motor drive applications

Application

SWITCHING

Specifications

Technology	MOSFET (Metal Oxide)	Configuration	2 N-Channel (Dual)
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	45V
Current - Continuous Drain (Id) @ 25°C	4A	Rds On (Max) @ Id, Vgs	53mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs	5.4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	460pF @ 10V	Power - Max	550mW
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	QS8K21