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See Technical Specifications

QS8K13TCR +BOM

N-channel and P-channel MOSFET with 4V drive

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

QS8K13TCR
Datasheet:

QS8K13TCR Datasheet (PDF)
Technology:

MOSFET (Metal Oxide)
Configuration:

2 N-Channel (Dual)
Drain To Source Voltage (Vdss):

30V
Current - Continuous Drain (Id) @ 25°C:

6A
EDA/CAD Models:

Request Free CAD Models for QS8K13TCR

QS8K13TCR General Description

IV. With its advanced micro-processing technologies, the QS8K13TCR sets a new standard for complex type MOSFETs, offering low ON-resistance and exceptional performance for a wide range of applications. Its broad lineup, covering compact types, high-power types, and complex types, ensures that it can meet various needs in the market, making it a versatile and reliable choice for engineers and designers. Whether it's for industrial, automotive, or consumer electronics applications, the QS8K13TCR is designed to deliver superior results, making it a top choice for electronic systems that require high efficiency and reliability

Application

SWITCHING

Specifications

Technology	MOSFET (Metal Oxide)	Configuration	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	30V	Current - Continuous Drain (Id) @ 25°C	6A
Rds On (Max) @ Id, Vgs	28mOhm @ 6A, 10V	Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds	390pF @ 10V
Power - Max	550mW	Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	QS8K13