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See Technical Specifications

QS8M51TR +BOM

Small Signal MOSFET capable of handling 100V voltage

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

QS8M51TR
Datasheet:

QS8M51TR Datasheet (PDF)
Technology:

MOSFET (Metal Oxide)
Configuration:

N and P-Channel
FET Feature:

Logic Level Gate
Drain To Source Voltage (Vdss):

100V
EDA/CAD Models:

Request Free CAD Models for QS8M51TR

QS8M51TR General Description

The QS8M51TR is a groundbreaking complex type MOSFET, designed to provide low ON-resistance through innovative micro-processing technologies. This allows for optimal performance across a wide range of applications, making it a versatile choice for various needs in the market. With a broad lineup that includes compact types, high-power types, and complex types, this MOSFET caters to a diverse range of requirements, ensuring that there is a suitable option for every project. Whether you're working on a compact device or a high-power application, the QS8M51TR delivers reliable and efficient performance, thanks to its advanced design and superior quality

Application

SWITCHING

Specifications

Technology	MOSFET (Metal Oxide)	Configuration	N and P-Channel
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	2A, 1.5A	Rds On (Max) @ Id, Vgs	325mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs	4.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	290pF @ 25V, 950pF @ 25V	Power - Max	1.5W
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	QS8M51