This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

UJ3C065080T3S +BOM

SiC unipolar transistor with N-JFET and N-MOSFET design, cascode configuration, 650V voltage rating, 23A current rating

Manufacturer:

Qorvo
Mfr.Part #:

UJ3C065080T3S
Datasheet:

UJ3C065080T3S Datasheet (PDF)
Technology:

SiC
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for UJ3C065080T3S

UJ3C065080T3S General Description

Product UJ3C065080T3S is a unique serial number that offers insight into the origins and specifications of the electronic component it represents. The code "UJ3" provides a clue to the manufacturer or specific model of the component, contributing to its traceability and quality assurance. The following character, "C," may offer details regarding the package type or specialized functionality of the device, showcasing its intended use in various electronic systems

Specifications

Product Category	MOSFET	Technology	SiC
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	650 V
Id - Continuous Drain Current	31 A	Rds On - Drain-Source Resistance	100 mOhms
Vgs - Gate-Source Voltage	- 25 V, + 25 V	Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	51 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	190 W
Channel Mode	Enhancement	Qualification	AEC-Q101
Tradename	SiC FET	Series	UJ3C
Configuration	Single	Fall Time	11 ns
Product Type	MOSFET	Rise Time	13 ns
Factory Pack Quantity	50	Subcategory	MOSFETs
Typical Turn-Off Delay Time	59 ns	Typical Turn-On Delay Time	18 ns
Unit Weight	0.068784 oz