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UJ3C120150K3S +BOM

TO-247-3 P-Channel Power Transistor

UJ3C120150K3S General Description

N-Channel 1200 V 18.4A (Tc) 166.7W (Tc) Through Hole TO-247-3

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Specifications

Product Category MOSFET Technology SiC
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 1.2 kV
Id - Continuous Drain Current 18.4 A Rds On - Drain-Source Resistance 180 mOhms
Vgs - Gate-Source Voltage - 25 V, + 25 V Vgs th - Gate-Source Threshold Voltage 3.5 V
Qg - Gate Charge 30 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 166.7 W
Channel Mode Enhancement Qualification AEC-Q101
Tradename SiC FET Series UJ3C
Configuration Single Fall Time 7 ns
Product Type MOSFET Rise Time 10 ns
Factory Pack Quantity 30 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 36 ns
Typical Turn-On Delay Time 21 ns Unit Weight 0.211644 oz

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