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Ultra-high frequency and rugged operation enable precise control in harsh environment
TO-247-3Manufacturer:
United Silicon Carbide, Inc
Mfr.Part #:
UJN1208K
Datasheet:
Technology:
SiC
Mounting Style:
Through Hole
Transistor Polarity:
N-Channel
Configuration:
Single
EDA/CAD Models:
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Avaq Semiconductor offers the highly versatile and reliable UJN1208K driver, produced by United Silicon Carbide, Inc. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.
To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the UJN1208K.
Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.
Product Category: | JFET | Technology: | SiC |
Mounting Style: | Through Hole | Transistor Polarity: | N-Channel |
Configuration: | Single | Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
Vgs - Gate-Source Breakdown Voltage: | +/- 20 V | Drain-Source Current at Vgs=0: | 21 A |
Id - Continuous Drain Current: | 21 A | Rds On - Drain-Source Resistance: | 230 mOhms |
Pd - Power Dissipation: | 136 W | Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 175 C | Packaging: | Tube |
Maximum Drain Gate Voltage: | 1.2 kV | Product Type: | JFETs |
Factory Pack Quantity: | 30 | Subcategory: | Transistors |
Type: | JFET | Unit Weight: | 0.216935 oz |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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