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UJ4C075060B7S +BOM

Silicon Carbide Field-Effect Transistor with 750 volts and 60 milliohms resistance, TO263-7 package

Manufacturer:

Qorvo
Mfr.Part #:

UJ4C075060B7S
Datasheet:

UJ4C075060B7S Datasheet (PDF)
Technology:

SiC
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Vds - Drain-Source Breakdown Voltage:

750 V
EDA/CAD Models:

Request Free CAD Models for UJ4C075060B7S

UJ4C075060B7S General Description

The model number UJ4C075060B7S acts as a precise identifier for a specific product, most likely falling within the category of electronic or mechanical components. With the manufacturer or brand indicated by the initials "UJ," the alphanumeric code "4C075060" possibly conveys essential information relating to the product's unique features, dimensions, and technical specifications. Furthermore, the concluding characters "B7S" may encompass supplementary details pertaining to the product's color variant, material composition, or version. For a thorough comprehension of the product and its potential applications, it is suggested to peruse the official documentation provided by the manufacturer or engage in direct communication with their customer support team for comprehensive elucidation

Specifications

Product Category	JFET	Technology	SiC
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	750 V	Id - Continuous Drain Current	25.8 A
Rds On - Drain-Source Resistance	58 mOhms	Pd - Power Dissipation	128 W
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Product Type	JFETs	Factory Pack Quantity	800
Subcategory	Transistors