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RF Mosfet 28 V 8GHz 12dB 60W Die
DieManufacturer:
MACOM
Mfr.Part #:
CG2H80060D-GP4
Datasheet:
Shipping Restrictions:
This product may require additional documentation to export from the United States.
Transistor Type:
HEMT
Technology:
GaN
Operating Frequency:
DC to 8 GHz
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RF Mosfet 28 V 8GHz 12dB 60W Die
Product Category | RF JFET Transistors | Shipping Restrictions | This product may require additional documentation to export from the United States. |
Transistor Type | HEMT | Technology | GaN |
Operating Frequency | DC to 8 GHz | Gain | 15 dB |
Transistor Polarity | N-Channel | Vds - Drain-Source Breakdown Voltage | 120 V |
Vgs - Gate-Source Breakdown Voltage | - 10 V, 2 V | Id - Continuous Drain Current | 6 A |
Output Power | 60 W | Maximum Drain Gate Voltage | - |
Maximum Operating Temperature | + 225 C | Pd - Power Dissipation | - |
Mounting Style | SMD/SMT | Forward Transconductance - Min | - |
Product Type | RF JFET Transistors | Factory Pack Quantity | 10 |
Subcategory | Transistors | Vgs th - Gate-Source Threshold Voltage | - 3.8 V |
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