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RF JFET Transistors GaN HEMT Die DC-6.0GHz, 60 Watt
DieManufacturer:
MACOM
Mfr.Part #:
CGH60060D-GP4
Datasheet:
Shipping Restrictions:
This product may require additional documentation to export from the United States.
Transistor Type:
HEMT
Technology:
GaN
Operating Frequency:
4 GHz to 6 GHz
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RF Mosfet 28 V 400 mA 6GHz 13dB 60W Die
Product Category | RF JFET Transistors | Shipping Restrictions | This product may require additional documentation to export from the United States. |
Transistor Type | HEMT | Technology | GaN |
Operating Frequency | 4 GHz to 6 GHz | Gain | 13 dB |
Transistor Polarity | N-Channel | Vds - Drain-Source Breakdown Voltage | 120 V |
Vgs - Gate-Source Breakdown Voltage | - 10 V to 2 V | Id - Continuous Drain Current | 6 A |
Output Power | 60 W | Maximum Drain Gate Voltage | - |
Pd - Power Dissipation | - | Mounting Style | SMD/SMT |
Application | - | Class | - |
Development Kit | - | Fall Time | - |
Gate-Source Cutoff Voltage | - | Height | 100 um |
Length | 2.86 mm | NF - Noise Figure | - |
Number of Channels | 4 Channel | Operating Temperature Range | - |
P1dB - Compression Point | - | Product | GaN HEMTs |
Product Type | RF JFET Transistors | Rds On - Drain-Source Resistance | 250 mOhms |
Rise Time | - | Factory Pack Quantity | 10 |
Subcategory | Transistors | Typical Turn-Off Delay Time | - |
Vgs th - Gate-Source Threshold Voltage | - 3 V | Width | 920 um |
Unit Weight | 0.187040 oz |
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