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RF JFET Transistors GaN HEMT Die DC-6.0GHz, 75 Watt
DieManufacturer:
Wolfspeed
Mfr.Part #:
CGHV60075D5-GP4
Datasheet:
Shipping Restrictions:
This product may require additional documentation to export from the United States.
Transistor Type:
HEMT
Technology:
GaN
Operating Frequency:
6 GHz
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RF Mosfet 50 V 125 mA 6GHz 17dB 75W Die
Product Category | RF JFET Transistors | Shipping Restrictions | This product may require additional documentation to export from the United States. |
Transistor Type | HEMT | Technology | GaN |
Operating Frequency | 6 GHz | Gain | 17 dB |
Transistor Polarity | N-Channel | Vds - Drain-Source Breakdown Voltage | 150 V |
Vgs - Gate-Source Breakdown Voltage | 150 V | Id - Continuous Drain Current | 10 A |
Output Power | 75 W | Maximum Drain Gate Voltage | - |
Pd - Power Dissipation | 41.6 W | Mounting Style | SMD/SMT |
Application | - | Class | - |
Configuration | - | Development Kit | - |
Fall Time | - | Forward Transconductance - Min | - |
Gate-Source Cutoff Voltage | - | Height | 100 um |
Length | 3 mm | NF - Noise Figure | - |
Operating Temperature Range | - | P1dB - Compression Point | - |
Product | GaN HEMTs | Product Type | RF JFET Transistors |
Rds On - Drain-Source Resistance | 280 mOhms | Rise Time | - |
Factory Pack Quantity | 10 | Subcategory | Transistors |
Typical Turn-Off Delay Time | - | Vgs th - Gate-Source Threshold Voltage | - 10 V, 2 V |
Width | 820 um |
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