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See Technical Specifications

CGHV27060MP +BOM

High-performance RF solution for demanding application

Manufacturer:

Wolfspeed
Mfr.Part #:

CGHV27060MP
Datasheet:

CGHV27060MP Datasheet (PDF)
Transistor Type:

HEMT
Technology:

GaN
Operating Frequency:

2.7 GHz
Gain:

18.5 dB
EDA/CAD Models:

Request Free CAD Models for CGHV27060MP

CGHV27060MP General Description

In addition to its impressive power capabilities, the CGHV27060MP excels in signal fidelity, offering exceptional linearity and minimal distortion. This makes it an ideal choice for applications that demand high-quality signal processing, ensuring that the output remains faithful to the input without any compromise on performance

Specifications

Product Category	RF JFET Transistors	Transistor Type	HEMT
Technology	GaN	Operating Frequency	2.7 GHz
Gain	18.5 dB	Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	150 V	Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Id - Continuous Drain Current	6.3 A	Output Power	60 W
Maximum Drain Gate Voltage	-	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 90 C	Pd - Power Dissipation	-
Mounting Style	SMD/SMT	Application	-
Class	-	Configuration	Single
Forward Transconductance - Min	-	Gate-Source Cutoff Voltage	-
Moisture Sensitive	Yes	NF - Noise Figure	-
Operating Temperature Range	- 40 C to + 90 C	P1dB - Compression Point	-
Product Type	RF JFET Transistors	Rds On - Drain-Source Resistance	-
Factory Pack Quantity	250	Subcategory	Transistors
Vgs th - Gate-Source Threshold Voltage	- 3 V	Unit Weight	0.008508 oz