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N-Channel 1200 V 4.7A (Tc) 65W (Tc) Surface Mount PG-TO263-7-12
SMDManufacturer:
Mfr.Part #:
IMBG120R350M1HXTMA1
Datasheet:
Series:
CoolSiC™
FET Type:
N-Channel
Technology:
SiCFET (Silicon Carbide)
Drain To Source Voltage (Vdss):
1200 V
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N-Channel 1200 V 4.7A (Tc) 65W (Tc) Surface Mount PG-TO263-7-12
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | CoolSiC™ |
FET Type | N-Channel | Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1200 V | Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
Rds On (Max) @ Id, Vgs | 468mOhm @ 2A, 18V | Vgs(th) (Max) @ Id | 5.7V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 5.9 nC @ 18 V | Vgs (Max) | +18V, -15V |
Input Capacitance (Ciss) (Max) @ Vds | 196 pF @ 800 V | FET Feature | Standard |
Power Dissipation (Max) | 65W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | IMBG120 |
RHoS | yes | PBFree | yes |
HalogenFree | yes |
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