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IMX1T110 +BOM

IMX1T110 is a 6-pin surface mount transistor with NPN bipolar junction technology

IMX1T110 General Description

With its advanced design and superior performance capabilities, the IMX1T110 is a top choice for engineers looking to enhance the functionality of their electronic devices. Its dual transistor setup allows for increased flexibility in circuit design, making it a versatile option for a variety of applications. From audio amplification to signal processing, this transistor is sure to deliver the high-quality performance you need for your projects

Key Features

1) Two 2SC2412K chips in a EMT or UMT or SMT package.

2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines.

3) Transistor elements are independent, eliminating interference.

4) Mounting cost and area can be cut in half.

Application

AMPLIFIER

Specifications

Pbfree Code Yes Part Life Cycle Code Active
Pin Count 6 Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 53 Weeks, 1 Day
Collector Current-Max (IC) 0.15 A Collector-Emitter Voltage-Max 50 V
Configuration SEPARATE, 2 ELEMENTS DC Current Gain-Min (hFE) 120
JESD-30 Code R-PDSO-G6 JESD-609 Code e1
Moisture Sensitivity Level 1 Number of Elements 2
Number of Terminals 6 Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.3 W Qualification Status Not Qualified
Surface Mount YES Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10 Transistor Application AMPLIFIER
Transistor Element Material SILICON Transition Frequency-Nom (fT) 180 MHz
VCEsat-Max 0.4 V

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