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IMW65R083M1HXKSA1 +BOM

High-performance power mosfet for demanding application

IMW65R083M1HXKSA1 General Description

N-Channel 650 V 24A (Tc) 104W (Tc) Through Hole PG-TO247-3-41

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Specifications

Product Category MOSFET Technology SiC
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 24 A Rds On - Drain-Source Resistance 111 mOhms
Vgs - Gate-Source Voltage - 5 V, + 23 V Vgs th - Gate-Source Threshold Voltage 5.7 V
Qg - Gate Charge 19 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 104 W
Channel Mode Enhancement Product Type MOSFET
Factory Pack Quantity 240 Subcategory MOSFETs
Part # Aliases IMW65R083M1H SP005423802

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