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See Technical Specifications

IMZ120R030M1H +BOM

Trans MOSFET N-CH SiC 1.2KV 56A 4-Pin(4+Tab) TO-247 Tube

Manufacturer:

INFINEON
Mfr.Part #:

IMZ120R030M1H
Datasheet:

IMZ120R030M1H Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Configuration:

SINGLE WITH BUILT-IN DIODE
EDA/CAD Models:

Request Free CAD Models for IMZ120R030M1H

IMZ120R030M1H General Description

The TO247-4 package design ensures easy integration and installation, while the optimized semiconductor process maximizes functionality and durability. Whether used in industrial, automotive, or renewable energy applications, the IMZ120R030M1H delivers unprecedented performance, making it a top choice for engineers and designers looking to push the boundaries of power electronics

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	1200 V	Drain Current-Max (ID)	56 A
Drain-source On Resistance-Max	0.056 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	13 pF	JEDEC-95 Code	TO-247
JESD-30 Code	R-PSFM-T4	JESD-609 Code	e3
Number of Elements	1	Number of Terminals	4
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	227 W
Pulsed Drain Current-Max (IDM)	150 A	Surface Mount	NO
Terminal Finish	TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	10
Transistor Application	SWITCHING	Transistor Element Material	SILICON CARBIDE