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High-power electronics require reliable N-channel MOSFETs like IMBGRXT
PG-TO263-7Manufacturer:
Mfr.Part #:
IMBG65R048M1HXTMA1
Datasheet:
Series:
CoolSiC™
FET Type:
N-Channel
Technology:
SiCFET (Silicon Carbide)
Drain To Source Voltage (Vdss):
650 V
EDA/CAD Models:
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N-Channel 650 V 45A (Tc) 183W (Tc) Surface Mount PG-TO263-7-12
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | CoolSiC™ |
FET Type | N-Channel | Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 650 V | Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 18V | Rds On (Max) @ Id, Vgs | 64mOhm @ 20.1A, 18V |
Vgs(th) (Max) @ Id | 5.7V @ 6mA | Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 18 V |
Vgs (Max) | +23V, -5V | Input Capacitance (Ciss) (Max) @ Vds | 1118 pF @ 400 V |
FET Feature | - | Power Dissipation (Max) | 183W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | IMBG65 | RHoS | yes |
PBFree | yes | HalogenFree | yes |
Product Category | MOSFET | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 650 V | Id - Continuous Drain Current | 45 A |
Rds On - Drain-Source Resistance | 64 mOhms | Vgs - Gate-Source Voltage | - 5 V, + 23 V |
Vgs th - Gate-Source Threshold Voltage | 5.7 V | Qg - Gate Charge | 33 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 183 W | Channel Mode | Enhancement |
Product | MOSFET | Product Type | MOSFET |
Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
Part # Aliases | IMBG65R048M1H SP005539172 |
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